机译:在180°C CMOS亚阈值电压基准上的0.7V,2.7μW,12.9ppm /°C
Cypress Semicond Inc, Cork, Ireland|Univ Cyprus, Dept Elect & Comp Engn, Univ House Anastasios G Leventis, CY-1678 Nicosia, Cyprus;
Univ Cyprus, Dept Elect & Comp Engn, Univ House Anastasios G Leventis, CY-1678 Nicosia, Cyprus;
bandgap voltage reference; BGR; CMOS analogue integrated circuits; curvature correction; reference circuits; subthreshold; temperature compensation; low voltage; low power; voltage reference; wide temperature range;
机译:0.75V,4-mu W,15-ppm /摄氏度,190摄氏度温度范围,参考电压
机译:139 nW,67 ppm /度C基于BJT-CMOS的电压基准电路
机译:3.9 ppm /℃,31.5 ppm / V超低功耗亚阈值纯CMOS电压基准
机译:从-30摄氏度到150摄氏度的30ppm /摄氏度的纳瓦级CMOS带隙基准
机译:0.45 V低功耗高PSRR亚阈值CMOS电压参考
机译:梨形四膜虫睫状行的180度旋转及其形态发生意义。
机译:由亚阈值MOSFET组成的300 nW,15 ppm / degC,20 ppm / V CMOS电压基准电路
机译:90度和180度钢筋钩定位评价。总结报告