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首页> 外文期刊>International journal of circuit theory and applications >A full-duplex transceiver for 20-Gbps high-speed simultaneous bidirectional signaling across global on-chip interconnections
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A full-duplex transceiver for 20-Gbps high-speed simultaneous bidirectional signaling across global on-chip interconnections

机译:全双工收发器,用于20-Gbps高速同时双向信号,跨全局片上互连

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摘要

This paper presents a high-speed simultaneous bidirectional transceiver (SBT) for on-chip wireline communications. A MOS hybrid transistor is utilized to split the received data from the superimposed signal at both ends of the on-chip interconnection with the assistance of two drivers, namely main and auxiliary. Moreover, a high-pass filter (HPF) is used as a differentiator to generate the echo cancelation signal. Consequently, the echo-cancelation for simultaneous bidirectional signaling (SBS) is realized by the combination of the hybrid device and the differentiator. The proposed SBT has been designed and evaluated using 28-nm CMOS technology over a narrow 5-mm on-chip interconnection, which possesses 11.9-dB loss at the Nyquist frequency (half a bit rate). The energy-efficiency of the proposed full-duplex transceiver (FDT) for 20-Gbps simultaneous bidirectional data transmission is 0.147 PJ/b/mm. The performance results show that the proposed SBT has better overall performance compared to the previous architectures reported in the literature to date. The layout of the presented SBT occupies a low area of 1574 mu m(2).
机译:本文介绍了用于片上有线通信的高速同时双向收发器(SBT)。 MOS混合晶体管利用在芯片互连的两端的叠加信号中将接收的数据与两个驱动器,即主和辅助的辅助分开。此外,使用高通滤波器(HPF)作为鉴别器以产生回波消除信号。因此,通过混合装置和微分器的组合实现了同时双向信令(SBS)的回声消除。拟议的SBT已经在窄5毫米片上互连上使用28-NM CMOS技术进行了设计和评估,该技术在奈奎斯特频率下具有11.9-DB损耗(半比特率)。提出的全双工收发器(FDT)的能量效率为20 Gbps同时双向数据传输为0.147 pj / b / mm。绩效结果表明,与迄今为止报告的以前的架构相比,拟议的SBT具有更好的整体性能。所提出的SBT的布局占1574 mu m(2)的低面积。

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