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Effect of embedding a porous medium on the deposition rate in a vertical rotating MOCVD reactor based on CFD modeling

机译:基于CFD模型的垂直旋转MOCVD反应器中嵌入多孔介质对沉积速率的影响

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This paper investigates numerically the effect of embedding a porous medium on the deposition rate in a two-dimensional (2-D) axi-symmetric vertical rotating metalorganic chemical vapor deposition (MOCVD) reactor. The 2-D Navier-Stokes, thermal-energy, and mass transfer equations as well as the wall surface reaction for growth rate in this model are solved by using commercial computational fluid dynamics (CFD) package, FLUENT (version 6.2), with a segregated method. As shown in the results, the recirculation cell caused by a buoyancy effect above the susceptor may be eliminated due to a large pressure drop during CVD process. Under a condition of the appropriate porosity and the appropriate distance between a porous medium and the susceptor, the film uniformity may be increased about 53.3% owing to a thin boundary layer near the susceptor. In addition, the case of a porous medium embedded in a modified MOCVD reactor is considered in this study to increase the film uniformity further. The numerical results show that the uniformity of the film may be enhanced about 77.9%.
机译:本文数值研究了在二维(2-D)轴对称垂直旋转金属有机化学气相沉积(MOCVD)反应器中嵌入多孔介质对沉积速率的影响。使用商业计算流体力学(CFD)软件包FLUENT(版本6.2),并使用以下公式求解了该模型中的二维Navier-Stokes,热能和传质方程以及壁面生长速率反应。隔离方法。如结果所示,由于在CVD处理期间的大的压降,可以消除由基座上方的浮力效应引起的再循环室。在适当的孔隙率和多孔介质与基座之间的适当距离的条件下,由于基座附近的边界层薄,膜的均匀性可以提高约53.3%。另外,在这项研究中考虑了将多孔介质嵌入改进型MOCVD反应器的情况,以进一步提高膜的均匀性。数值结果表明,膜的均匀性可以提高约77.9%。

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