Influence of Structural Defects on the Mechanical Stress Induced by Selenium Diffusion in GaAs Single Crystals

摘要

Data are presented on the mechanical stress in the selenium diffusion zone in GaAs single crystals differing in defect structure. The stress is found to be influenced by the dislocation density and vacancy composition in the parent crystal. It is shown that the discrepancy between the experimental data and theoretical predictions can be eliminated by introducing an additional coefficient into the expression for the stress.