Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

Jorge Garcia; Sara Saeed; Emre Gurpinar; Alberto Castellazzi; Pablo Garcia

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Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

机译：自供电高频调制SiC功率MOSFET隔离式栅极驱动器

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摘要

A novel implementation of an isolated gate driver for power switches is proposed in this study. The driver is bespoke designed for SiC power

机译：在这项研究中提出了一种隔离开关驱动器的新实现。该驱动器是为SiC电源定制的

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来源
《IEEE Transactions on Industry Applications》 |2019年第4期|3967-3977|共11页
作者
Jorge Garcia; Sara Saeed; Emre Gurpinar; Alberto Castellazzi; Pablo Garcia;
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作者单位

LEMUR Group Electrical Engineering Department University of Oviedo Gijon Spain;

Oak Ridge National Laboratory Oak Ridge TN USA;

Power Electronics Machines and Control;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Circuit faults; Silicon carbide; MOSFET; Gate drivers; Pulse width modulation; Logic gates;

机译：电路故障;碳化硅;MOSFET;门驱动器;脉冲宽度调制;逻辑门;

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专利

1. Monitoring of Gate Leakage Current on SiC Power MOSFETs: An Estimation Method for Smart Gate Drivers [J] . Weckbrodt Julien, Ginot Nicolas, Batard Christophe, IEEE Transactions on Power Electronics . 2021,第8期

机译：SIC电源MOSFET上的栅极漏电流监控：智能栅极驱动器的估计方法
2. Highly compact isolated gate driver with ultrafast overcurrent protection for 10 kV SiC MOSFETs [J] . Daniel Rothmund, Dominik Bortis, Johann W. Kolar CPSS Transactions on Power Electronics and Applications . 2018,第4期

机译：高度紧凑的隔离式栅极驱动器，具有针对10 kV SiC MOSFET的超快速过流保护
3. SiC MOSFETs Gate Driver With Minimum Propagation Delay Time and Auxiliary Power Supply With Wide Input Voltage Range for High-Temperature Applications [J] . Zhang Zhiliang, Yao Kaiqi, Ke Guangjie, Emerging and Selected Topics in Power Electronics, IEEE Journal of . 2020,第1期

机译：SIC MOSFET栅极驱动器具有最小的传播延迟时间和辅助电源，具有宽输入电压范围，用于高温应用
4. High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs [C] . Jorge Garcia, Emre Gurpinar, Alberto Castellazzi Annual IEEE Applied Power Electronics Conference and Exposition . 2017

机译：高频调制次级侧自供电隔离式栅极驱动器，用于SiC功率MOSFET的全范围PWM操作
5. Design, Analysis, and Optimization of 1.2 kV 4H-SiC Planar-Gate Power MOSFETs for Improved High Frequency Switching [D] . Han, Kijeong. 2019

机译：1.2 kV 4H-SiC平面栅极功率MOSFET的设计，分析和优化，用于改进的高频切换
6. Radiation Response of Negative Gate Biased SiC MOSFETs [O] . Akinori Takeyama, Takahiro Makino, Shuichi Okubo, 2019

机译：负栅偏置SiC MOSFET的辐射响应
7. High-frequency modulated secondary-side self-powered isolated gate driver for full range PWM operation of SiC power MOSFETs [O] . García García, Jorge, Gurpinar, Emre, Castellazzi, Alberto 2017

机译：高频调制次级侧自供电隔离式栅极驱动器，用于SiC功率MOSFET的全范围PWM操作

Self-Powering High Frequency Modulated SiC Power MOSFET Isolated Gate Driver

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