Thermal donor formation in CZ-silicon annealed at 450 deg C in air ambient

摘要

Exact kinetics of donor formation and possible number of oxygen atoms in a single thermal donor (TD) are two aspects out of many problems related with oxygen related donors in CZ-silicon, which carry a mark of interrogation. Boron doped p-type silicon wafers were annealed in air ambient at 450 deg C for different durations and subjected to resistivity and FTIR studies. It was observed that ambient do not affect the process of TD generation.