Compound materials have made the headlines in recent semiconductor developments, which includes the Ohio-based researchers' new magnetic-semiconductor bi-layer of GaN and MnGa for spin control (which will operate at room temperatures), and to Intel and UCSB's development of a hybrid chip of light-emitting InP combined with silicon. But at this December's IEDM, one spotlight is on chalcogenide memories or phase change materials. Judging by patent activity, and some of the developments in 2006, this could become another 'must have' characteristic for advanced memories, though dates for wide availability range from 2008 to 2010.
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