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TMR-Based Logic-in-Memory Circuit for Low-Power VLSI

机译:基于TMR的低功耗VLSI存储器中逻辑电路

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摘要

A tunneling raagnetoresistive(TMR)-based logic-in-memory circuit, where storage functions are distributed over a logic-circuit plane, is proposed for a low-power VLSI system. Since the TMR device is regarded as a variable resistor with a non-volatile storage capability, any logic functions with external inputs and stored inputs can be performed by using the TMR-based resistor/transistor network. The combination of dynamic current-mode circuitry and a TMR-based logic network makes it possible to perform any switching operations without steady current, which results in power saving. A design example of an SAD unit for MPEG encoding is discussed, and its advantages are demonstrated.
机译:针对低功耗VLSI系统,提出了一种基于隧道Raagnetoresistive(TMR)的内存中逻辑电路,其中存储功能分布在逻辑电路平面上。由于TMR器件被视为具有非易失性存储功能的可变电阻器,因此可以使用基于TMR的电阻器/晶体管网络来执行具有外部输入和存储的输入的任何逻辑功能。动态电流模式电路和基于TMR的逻辑网络相结合,可以在没有稳定电流的情况下执行任何开关操作,从而节省了功率。讨论了用于MPEG编码的SAD单元的设计示例,并演示了其优点。

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