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A Non-Iterative Method for Calculating the Effective Capacitance of CMOS Gates with Interconnect Load Effect

机译:具有互连负载效应的CMOS栅极有效电容的非迭代计算方法

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摘要

Gate delay evaluation is always a vital concern for high-performance digital VLSI designs. As the feature size of VLSIs decreases to the nano-meter region, the work to obtain an accurate gate delay value becomes more difficult and time consuming than ever. The conventional methods usually use iterative algorithms to ensure the accuracy of the effective capacitance C_eff, which is usually used to compute the gate delay with interconnect loads and to capture the output signal shape of the real gate response. Accordingly, the efficiency is sacrificed. In this paper, an accurate and efficient approach is proposed for gate delay estimation. With the linear relationship of gate output time points and Ceff, a polynomial approximation is used to make the nonlinear effective capacitance equation be solved without iterative method. Compared to the conventional methods, the proposed method improves the efficiency of gate delay calculation. Meanwhile, experimental results show that the proposed method is in good agreement with SPICE results and the average error is 2.8%.
机译:栅极延迟评估始终是高性能数字VLSI设计的重要考虑因素。随着VLSI的特征尺寸减小到纳米区域,获得准确的栅极延迟值的工作比以往更加困难和耗时。传统方法通常使用迭代算法来确保有效电容C_eff的精度,该电容通常用于计算具有互连负载的栅极延迟并捕获实际栅极响应的输出信号形状。因此,牺牲了效率。在本文中,提出了一种准确而有效的方法来进行门延迟估计。利用栅极输出时间点与Ceff的线性关系,采用多项式逼近法,无需迭代方法即可求解非线性有效电容方程。与传统方法相比,该方法提高了门延迟计算的效率。同时,实验结果表明,该方法与SPICE结果吻合良好,平均误差为2.8%。

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