Ingap/gaas Hbt Mmic Amplifier With Low Power Consumption And Low Noise Characteristics For Full-band Uwb Receiver Systems

摘要

A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.