机译:硅注入氧化物的MOS电容器的电流电压磁滞特性
Department of Information Systems Engineering, Toyama Prefectural University, Imizu-shi, 939-0398 Japan;
Department of Information Systems Engineering, Toyama Prefectural University, Imizu-shi, 939-0398 Japan;
Department of Information Systems Engineering, Toyama Prefectural University, Imizu-shi, 939-0398 Japan;
Department of Information Systems Engineering, Toyama Prefectural University, Imizu-shi, 939-0398 Japan;
Department of Communication Engineering, Okayama Prefectural University, Soja-shi, 719-1197 Japan;
Department of Communication Engineering, Okayama Prefectural University, Soja-shi, 719-1197 Japan;
Dawn Enterprise Co., LTD., Nagoya-shi, 467-0808 Japan;
MOS capacitors; Si-implantation; thermal oxide; I-V hysteresis; hysteresis window; nonvolatile memory;
机译:氧化铟锡/聚[2-甲氧基-5-(2'-乙基-己氧基)-1,4-亚苯基亚乙烯基](MEHPPV)+氧化锌(ZnO)/ Al的磁滞型电流-电压特性:面向存储器设备
机译:氧化铟锡/掺杂有聚(4-苯乙烯磺酸盐)/氧化铟锡器件的聚(3,4-乙撑二氧噻吩)的磁滞型电流-电压特性
机译:开关电流研究:使用电流电压测量方法的铁电电容器磁滞测量
机译:建模4H-SIC晶体管中电流电压特性的滞后
机译:使用渐近方法,利用靠近硅/二氧化硅界面的薄氧化物,利用量子力学效应对MOSFET器件的电流-电压(I-V)特性进行建模。
机译:FinFET和带铁电电容器的全耗尽绝缘体上硅(FDSOI)MOSFET的磁滞窗口研究
机译:通过测量mOs电容器的电流 - 电压特性来表征边界陷阱
机译:350℃下硝酸盐/亚硝酸盐熔盐中锆合金的氧化。不同热处理和表面处理对电流 - 电压特性的影响。