机译:金属有机气相外延对PH_3预流时间对Si衬底上GaP初始生长的影响
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu-shi, 432-8561 Japan;
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu-shi, 432-8561 Japan;
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu-shi, 432-8561 Japan;
Department of Electrical and Electronic Engineering, Shizuoka University, Hamamatsu-shi, 432-8561 Japan;
defects; growth models; GaP on Si; metalorganic vapor phase epitaxy; semiconducting III-V compounds;
机译:金属有机气相外延法在Si衬底上高温生长GaP
机译:微波激发金属有机气相外延在GaAs(111)和GaP(111)衬底上生长InN膜
机译:高温对金属有机气相外延生长低位错含量的AlN桥层对6H-SiC衬底的影响
机译:金属有机气相外延在独立AlN衬底上同质外延生长AlN层
机译:微金属应用中通过金属有机气相外延生长在6H-SiC(0001)衬底上的GaN和AlGaN的生长,掺杂和表征。
机译:有机金属气相外延过程中GaN(0001)和(000-1)的CH4吸附概率及其与膜中碳污染的关系
机译:金属有机气相外延法在Si衬底上高温生长GaP