机译:具有限流触点的InP Gunn二极管,用于高效Gunn振荡器
Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;
rnMillimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;
rnMillimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;
rnMillimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul 100-715, Korea;
rnAgency for Defense Development, Deajeon 305-600, Korea;
Agency for Defense Development, Deajeon 305-600, Korea;
InP; Gunn diodes; shallow-barrier schottky contacts; current-limiting cathode;
机译:具有浅势垒肖特基触点的InP Gunn二极管
机译:具有浅势垒肖特基触点的InP Gunn二极管
机译:具有浅势垒肖特基触点的InP Gunn二极管
机译:使用新型倒装芯片InP Gunn二极管在AlN衬底上的77 GHz平面Gunn VCO
机译:高能电子注入阴极对枪式振荡器性能的影响。
机译:用于汽车工业的77 GHz GaAs耿氏二极管芯片的制造与表征
机译:对电流输出的高频微结构研究
机译:毫米波自混合Inp和Gaas Gunn振荡器