Metrology of microscopic properties of graphene on SiC

摘要

Graphene has recently attracted a lot of research interest because of its superior electric properties. Thermally grown epitaxial graphene on SiC substrate is promising for future electronic devices because of its compatibility with existing wafer-scale manufacturing. In this paper, microscopic metrological methods for graphene on SiC will be discussed. A layer number determination method using low-energy electron microscopy (LEEM) enables us to control the layer number and morphology of few-layer graphene. Local conductance measurements using an integrated nanogap probe based on scanning probe microscopy reveal the electrical properties of graphene nanoislands and double-layer graphene sheets on SiC.