机译:利用非对称掺杂的通道区域,具有高读取和编程验证速度的多级双通道NAND闪存
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-gu, Seoul 133-791, Korea;
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-gu, Seoul 133-791, Korea;
Department of Nanoscale Semiconductor Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-gu, Seoul 133-791, Korea;
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-gu, Seoul 133-791, Korea;
Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-gu, Seoul 133-791, Korea,Division of Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seoungdong-gu, Seoul 133-791, Korea;
NAND flash memory; multilevel dual-channel; high-speed multilevel reading; current sensing; and high-speed program verifying;
机译:利用非对称掺杂的通道区域,具有高读取和程序验证速度的多级双通道NAND闪存
机译:利用非对称掺杂的通道区域,具有高读取和编程验证速度的多级双通道NAND闪存
机译:利用非对称掺杂的通道区域,具有高读取和编程验证速度的多级双通道NAND闪存
机译:具有高速读取和验证程序的多级双通道NAND闪存
机译:闪存可擦可编程只读存储设备中的热载流子效应。
机译:CMOS兼容的铁电NAND闪存用于高密度低功耗和高速三维内存
机译:关于多级NaND闪存通道的容量