InGaAs/InP MISFET with epitaxially grown source

摘要

Recently, Ⅲ-Ⅴ thin films have been identified as potential candidates for future nMOS channels. High current drivability in these thin films can be achieved if the doping concentration in the source is made to exceed 1 ×10~(19) cm~(-3). However, in the case of Ⅲ-Ⅴ materials, it is difficult to achieve high doping concentrations using ion implantation techniques. This report includes the results of our attempt to realize an epitaxially grown source, with which high doping concentrations can be achieved. One approach involves the fabrication of an InP/InGaAs composite channel MISFET with InGaAs source and drain by selective regrowth using MOVPE. The other approach involves the use of vertical FETs with a heterolauncher for the ballistic transport of electrons.