GaInAsP/InP single-trench type TE-TM mode converter

摘要

A TE-TM mode converter is proposed in a single trench GalnAsP/InP waveguide configuration fabricated by a single masking and etching process. Use of single-trench structure makes the design and the fabrication much simpler. The design of single-trench mode converter is described together with its fabrication in this article. 50 % TE-TM mode conversion was obtained at a wavelength of 1.55 nm in a fabricated device.