Fabrication of integrated light-emitting devices based on GaN requires a vertical carrier injection. In the case, GaN growth on metal substrates is one of the solutions. Epitaxial growth of (111)Al on (0001)sapphire was investigated for the application to pseudo Al substrates for the HI-V growth. At the growth temperatures around 200 ℃, the Epitaxial growth was achieved. Its atomic force microscopy (AFM) images indicated that the surface morphology of the (111)Al layer was smooth compared with that of bulky (111)Al substrates with chemical polishing treatment. The surface nitridation was also investigated. At the temperature of 350 ℃, streaky RHEED patterns were observed. Those results clarified that the pseudo Al substrates grown by MBE was suitable for the substrates using the Ⅲ-V growth.%GaN系低コスト集積化発光素子の実現は小型フラットパネルディスプレイの高輝度化の点から注目されている．集積密度向上のためには，各素子に対する電極配置は、縦型が望ましい．このような観点から、サファイア基板上に形成した疑似Al基板上にMBE法によるGaN薄膜製作検討を行った結果について報告する．サファイア基板上に疑似Al基板を基板温度200℃程度でエピタキシャル成長により形成した．表面窒化によりAlNを350℃にて形成後GaNの成長を行った結果，良好なGaN薄膜の形成が可能であることがわかった．
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