Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors

摘要

SiC GTO thyristors may soon be the best available choice for very high-power switching. At this time, the authors have developed new operational techniques, growth requirements and pn-pn-pn type structures to address the issues of high on-state voltage, poor turn-off gain, and inability to reach predicted breakover voltages. They present these findings using experimental measurements and numerical simulations.