A Novel Single-SiC-Switch-Based ZVZCS Tapped Boost Converter

摘要

A new single-active-switch-based zero voltage and zero current switching (ZVZCS) tapped boost converter is proposed. For the ZVZCS operation of the converter, three diodes and two capacitors were added to an ordinary tapped boost converter. When turned ON, the active switch is in zero current switching with the help of leakage inductance of a tapped inductor. When turned OFF, the energy of the leakage inductance is transferred to a snubber capacitor through a diode, which results in zero voltage switching of the active switch. Then the energy of the snubber capacitor is retrieved by a recovery capacitor connected to the tapped inductor. Different from most conventional soft switching converters that need at least two active switches, the proposed converter requires only one active switch such as JFET and MOSFET to guarantee ZVZCS operation for wide operating ranges of duty cycle, load current, and input voltage. The voltage stress of the active switch is always less than the load voltage, and soft switching turn-on and off is achieved without cumbersome current or voltage sensing, which could not be obtained from quasi-resonant converters that also have an active switch. Furthermore, the dc voltage gain of the proposed converter is quite robust against load change and is determined only by duty cycle like a canonical boost converter; hence, it can be even open-loop controlled. All the diodes are in ZVZCS as well, and all the components except an output diode have the voltage stress less than the load voltage. In this paper, the voltage stress of the output diode was selected to have two times the load voltage. A detailed analysis for the continuous conduction mode and the design procedures of the proposed converter is fully established, and experimentally verified for a 450-W prototype over the input voltage of 100–250 V, achieving 98.1% of maximum efficiency at the switching frequency of 100 kHz with a SiC JFET. Due to its versatile- soft switching characteristics, the proposed scheme can be generally applied to high-frequency and high-efficiency dc–dc converters as well as power factor correctors.