Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors

摘要

The paper presents an inductor with reduced self-capacitance, designed and evaluated with fast-switching SiC transistors in dc–dc converters. A conventional inductor with the same core and number of turns was also build for comparison. The two inductors are tested experimentally on two different 2 kW, 100 kHz dc–dc converters with silicon carbide switches—one with a junction field-effect transistor (JFET) and the other with a bipolar junction transistor (BJT). Replacing the conventional inductor with the one that has lower self-capacitance improved the switching performance of the converter and reduced its electromagnetic emissions. Furthermore, the efficiency of the converter is improved—in the case of the JFET boost converter the power losses were reduced by 16% and by 20% in the case of BJT.