Develop Parasitic Inductance Model for the Planar Busbar of an IGBT H Bridge in a Power Inverter

摘要

This paper first analyzes the current paths on a planar busbar based on insulated-gate bipolar transistor bridge switching states and dc-link capacitor configurations. The busbar's circuit models which include both self- and mutual inductances are developed based on the identified current paths. The inductance circuit models are analyzed and reduced for different switching states, transition states, and dc-link capacitor configurations. Inductance and current sharing is analyzed based on circuit theory. Both simulations and measurements are conducted to verify the developed technique.