机译:GaN结屏障二极管的雪崩和浪涌电流鲁棒性的演示,具有600V / 10-A开关能力
Nanjing Univ Sch Elect Sci & Engn Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;
CorEnergy Semicond Co Ltd Suzhou 215000 Peoples R China;
Nanjing Univ Sch Elect Sci & Engn Collaborat Innovat Ctr Adv Microstruct Nanjing 210093 Peoples R China;
Surges; Schottky diodes; Silicon carbide; Gallium nitride; Reliability; Heating systems; MOSFET; Avalanche breakdown; GaN; junction barrier Schottky (JBS) diode; safe-operation-area (SOA); surge current;
机译:通过布局设计提高SiC结势垒肖特基二极管的浪涌电流鲁棒性
机译:高压4H-SiC结势垒肖特基整流器的浪涌电流能力和等温电流-电压特性
机译:商业1200 V SiC肖特基二极管的浪涌电流和雪崩鲁棒性
机译:高性能准垂直GAN结屏障肖特基二极管,零反向恢复和坚固耐用的雪崩功能
机译:4H碳化硅中的单片集成功率JFET和结势垒肖特基二极管。
机译:GaN基纳米级肖特基势垒二极管中的势垒不均匀性限制了电流和1 / f噪声的传输
机译:基于结电容模型的SiC肖特基势垒二极管高频开关能力评估
机译:硅化物肖特基势垒二极管的雪崩特性