Online Junction Temperature Extraction of SiC Power

Chengmin Li; Haoze Luo; Chushan Li; Wuhua Li; Huan Yang; Xiangning He

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Online Junction Temperature Extraction of SiC Power

机译：SiC电源的在线结温提取

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摘要

s ensures safe operation and helps reliability assessment of the devices. In this pape

机译：s可确保安全操作并有助于评估设备的可靠性。在这个纸上

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来源
《IEEE Transactions on Power Electronics》 |2019年第10期|10143-10152|共10页
作者
Chengmin Li; Haoze Luo; Chushan Li; Wuhua Li; Huan Yang; Xiangning He;
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作者单位

College of Electrical Engineering Zhejiang University Hangzhou China;

Zhejiang University-University of Illinois at Urbana-Champaign Institute Zhejiang University Hangzhou China;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Silicon carbide; MOSFET; Temperature measurement; Temperature sensors; Junctions; Spontaneous emission; P-i-n diodes;

机译：碳化硅;MOSFET;温度测量;温度传感器;交界处;自发发射;P-i-n二极管;

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专利

1. Online High-Power p-i-n Diode Junction Temperature Extraction With Reverse Recovery Fall Storage Charge [J] . Haoze Luo, Yuxiang Chen, Wuhua Li, IEEE Transactions on Power Electronics . 2017,第4期

机译：具有反向恢复功能的在线大功率p-i-n二极管结温度提取秋季存储电荷
2. Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs [J] . Gonzalez Jose Ortiz, Alatise Olayiwola IEEE Transactions on Industry Applications . 2021,第2期

机译：偏置温度不稳定性和结温测量使用SIC功率MOSFET中的电气参数
3. Maximum Junction Temperatures of SiC Power Devices [J] . Sheng K. IEEE Transactions on Electron Devices . 2009,第2期

机译：SiC功率器件的最高结温
4. Online junction temperature extraction with turn-off delay time for high power IGBTs [C] . Sun Pengfei, Luo Haoze, Dong Yufei, IEEE Energy Conversion Congress and Exposition . 2014

机译：大功率IGBT的在线结温提取和关断延迟时间
5. High Power Density High-Temperature Liquid Cooled SiC Inverter System [D] . Zhang, Chi 2019

机译：高功率密度高温液冷SiC逆变器系统
6. Comparisons of Damage Evolution between 2D C/SiC and SiC/SiC Ceramic-Matrix Composites under Tension-Tension Cyclic Fatigue Loading at Room and Elevated Temperatures [O] . Longbiao Li 2016

机译：室温和高温下拉伸张力循环疲劳载荷下2 C / SiC和SiC / SiC陶瓷基复合材料损伤演化的比较
7. Electromigration Reliability of the Contact Hole in SiC Power Devices Operated at Higher Junction Temperatures [O] . Satoshi Tanimoto, Naoki Nishio, Tatsuhiro Suzuki, 2010

机译：在较高结温下操作的SIC电源装置中接触孔的电迁移可靠性
8. N-Type SiC Rectifying Junctions for High Power, High Temperature Electronics [R] . Parsons, J. D. 1996

机译：用于高功率，高温电子器件的N型siC整流结

Online Junction Temperature Extraction of SiC Power

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