Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic

Fei Yang; Chi Xu; Bilal Akin

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Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic

机译：开关暂态对动态影响的实验评估与分析

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摘要

-resistance in gallium nitride (GaN) devices is problematic as it can impair the converter's efficiency due to the increased conduction loss

机译：氮化镓（GaN）器件的电阻很成问题，因为它会因导通损耗增加而损害转换器的效率

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来源
《IEEE Transactions on Power Electronics》 |2019年第10期|10121-10135|共15页
作者
Fei Yang; Chi Xu; Bilal Akin;
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作者单位

Department of Electrical and Computer Engineering The University of Texas at Dallas Richardson TX USA;

Department of Electrical and Computer Eng;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Gallium nitride; Logic gates; Sensors; Switches; HEMTs; MODFETs; Voltage measurement;

机译：氮化镓逻辑门传感器;开关;HEMT;MODFET;电压量测;

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Experimental Evaluation and Analysis of Switching Transient's Effect on Dynamic

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