Characteristics of the high-speed SI thyristor and its application to the 60-kHz 100-kW high-efficiency inverter

摘要

The authors describe fabrication results for the 1200 V, 300 A class of the single-buried-gate, n-buffer free and anode-emitter-shorted, normally-on-type, medium-power, very low-loss, high-speed SI thyristor. This class of thyristors has a relatively thinner n-type high resistivity that is larger than that of the 2500 V 300 A class of SI thyristors. The characteristics of the fabricated device were investigated to obtain data for the improvement of the turn-off switching performance of the buried-gate SI thyristor for use as a power switch.