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首页> 外文期刊>Nuclear Science, IEEE Transactions on >High-Speed, Radiation-Tolerant Laser Drivers in 0.13 src='/images/tex/241.gif' alt='mu'> m CMOS Technology for HEP Applications
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High-Speed, Radiation-Tolerant Laser Drivers in 0.13 src='/images/tex/241.gif' alt='mu'> m CMOS Technology for HEP Applications

机译:0.13版的高速,耐辐射激光驱动器 src =“ / images / tex / 241.gif” alt =“ mu”> m CMOS技术用于HEP应用

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摘要

The gigabit laser driver (GBLD) and low-power GBLD (LpGBLD) are two radiation-tolerant laser drivers designed to drive laser diodes at data rates up to 4.8 Gb/s. They have been designed in the framework of the gigabit-transceiver (GBT) and versatile-link projects to provide fast optical links capable of operation in the radiation environment of future high-luminosity high-energy physics experiments. The GBLD provides laser bias and modulation currents up to 43 mA and 24 mA, respectively. It can thus be used to drive vertical cavity surface emitting laser (VCSEL) and edge-emitting laser diodes. A pre-emphasis circuit, which can provide up to 12 mA in 70 ps pulses, has also been implemented to compensate for high external capacitive loads. The current driving capabilities of the LpGBLD are 2 times smaller that those of the GBLD as it has been optimized to drive VCSELs in order to minimize the power consumption. Both application-specific integrated circuits are designed in 0.13 m commercial complementary metal–oxide semiconductor technology and are powered by a single 2.5 V supply. The power consumption of the core circuit is 89 mW for the GBLD and 55 mW for the LpGBLD.
机译:千兆位激光驱动器(GBLD)和低功耗GBLD(LpGBLD)是两个耐辐射的激光驱动器,旨在以高达4.8 Gb / s的数据速率驱动激光二极管。它们是在千兆位收发器(GBT)和通用链路项目的框架中设计的,以提供能够在未来的高发光度高能物理实验的辐射环境中运行的快速光链路。 GBLD分别提供高达43mA和24mA的激光偏置和调制电流。因此,它可用于驱动垂直腔表面发射激光器(VCSEL)和边缘发射激光二极管。还实现了预加重电路,该电路可在70ps的脉冲中提供高达12mA的电流,以补偿高外部电容性负载。 LpGBLD的当前驱动能力是GBLD的2倍,因为它已经过优化以驱动VCSEL,从而将功耗降至最低。两种专用集成电路均采用0.13 m商业互补金属氧化物半导体技术设计,并由2.5V单电源供电。 GBLD的核心电路功耗为89 mW,LpGBLD的功耗为55 mW。

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