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Heavy-Ion Micro Beam and Simulation Study of a Flash-Based FPGA Microcontroller Implementation

机译:重离子微束及基于闪存的FPGA单片机实现的仿真研究

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摘要

Flash-based FPGAs are frequently used in space applications and it is now common for such designs to include a small microcontroller. In this paper, we present the results of a detailed study of two implementations of an ARM® Cortex®-M0+ processor. The first implementation uses a standard design flow while the second implementation is protected with RHBD techniques including TMR flip-flops. Both designs were tested using a heavy-ion micro-beam using a methodology which enables individual ions to be localized both in space and time. The rate of silent data corruption (SDC) was only reduced by 5x in the protected version. Many, but not all, of the error scenarios were reproduced using simulation based fault injection. Overall, the results suggest that the contribution of single event transients (SETs) can not be neglected and the results show the limitations of flip-flop based TMR.
机译:基于闪存的FPGA经常用于空间应用中,现在这种设计通常会包含一个小型微控制器。在本文中,我们介绍了对ARM®Cortex®-M0+处理器的两种实现的详细研究结果。第一种实现使用标准的设计流程,而第二种实现则受到包括TMR触发器在内的RHBD技术的保护。两种设计均使用重离子微束进行了测试,该方法使用的方法可以使单个离子在空间和时间上都定位。在受保护的版本中,静默数据损坏(SDC)的速度仅降低了5倍。使用基于模拟的故障注入可以复制许多但不是全部的错误情况。总体而言,结果表明单事件瞬变(SET)的贡献不可忽略,并且结果表明了基于触发器的TMR的局限性。

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