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首页> 外文期刊>IEEE Transactions on Microwave Theory and Techniques >Investigation of Drain-Line Loss and the S22 Kink Effect in Capacitively Coupled Distributed Amplifiers
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Investigation of Drain-Line Loss and the S22 Kink Effect in Capacitively Coupled Distributed Amplifiers

机译:电容耦合分布式放大器的漏线损耗和S22扭结效应的研究

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This paper investigates the practical limits of the capacitively coupled distributed amplifier (DA) in terms of common-source output impedance. It is shown that the output impedance of the common-source device is considerably affected by the input coupling circuit. The S22 kink effect is more pronounced in the case of the capacitively coupled circuit. The effect on drain-line loss is very marked, and becomes the practical limitation of the technique. The effect is clearly illustrated by practical measurements on a 45-MHz-20-GHz GaAs monolithic-microwave integrated-circuit amplifier. The kink effect is also shown to be relevant to the output impedance and stability of the common-gate stage in the cascode DA topology.
机译:本文根据共源输出阻抗研究了电容耦合分布式放大器(DA)的实际限制。可以看出,共源设备的输出阻抗受输入耦合电路的影响很大。在电容耦合电路的情况下,S22扭结效应更为明显。对漏极线损耗的影响非常明显,并成为该技术的实际限制。通过对45MHz-20GHz GaAs单片微波集成电路放大器的实际测量可以清楚地说明这种影响。纽结效应还显示出与共源共栅DA拓扑中共栅级的输出阻抗和稳定性有关。

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