A New 12-Term Open–Short–Load De-Embedding Method for Accurate On-Wafer Characterization of RF MOSFET Structures

摘要

A new algorithm for open-short-load de-embedding of on-wafer S-parameter measurements is presented. Since in typical on-wafer RF transistor test-structures the imperfect grounding of the internal ports is the dominant source of crosstalk between ports, our proposed open-short-load approach resolving a 12-term error model is equally accurate as the current more general 15-term approach, which requires five dummy structures. To demonstrate this, experimental results obtained for six different increasingly sophisticated on-wafer correction schemes using 2-8 different de-embedding standards and resolving between 8-22 error terms, using S -parameter data taken up to 110 GHz on 65- and 45-nm node MOSFET devices are compared.