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首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >Multichannel and Wideband Power Amplifier Design Methodology for 4G Communication Systems Based on Hybrid Class-J Operation
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Multichannel and Wideband Power Amplifier Design Methodology for 4G Communication Systems Based on Hybrid Class-J Operation

机译:基于混合J类运算的4G通信系统多通道和宽带功率放大器设计方法

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摘要

A methodology for the design of multichannel, wideband, highly efficient hybrid Class-J power amplifiers for fourth–generation (4G) communication transmitters is proposed. The design procedure is based on the automatic generation and evaluation of a vast number of output matching networks of the same topology but different dimensions, with respect to efficiency, output power, and linearity. The approach can find application in the management of the efficiency/linearity/bandwidth tradeoff in amplifier design. In this paper, two matching network architectures have been considered. One multistubbed network and a stepped-impedance microstrip line network. The approach has been validated through the design, simulation, and measurement of two power amplifiers realized using the aforementioned procedure. The first amplifier covers 1.6–2.2 GHz (31.6% fractional bandwidth) with 55%–68% drain efficiency at the 2-dB compression point and worst case adjacent channel power ratio (ACRP) and error vector magnitude (EVM) of ${-}hbox{ 21.8 dBc}$ and 8.35%, respectively, over the bandwidth. The second covers 0.5–1.8 GHz (113% fractional bandwidth) with 50%–69% drain efficiency at the 2-dB compression point and worst case ACRP of ${-}hbox{ 27.5 dBc}$ and EVM of 4.22%. Both amplifiers are based on a commercial, packaged 10-W GaN HEMT transistor.
机译:提出了一种用于第四代(4G)通信发射机的多通道,宽带,高效混合J类功率放大器的设计方法。设计过程基于自动生成和评估效率,输出功率和线性度相同且拓扑结构不同的大量输出匹配网络。该方法可以在放大器设计中效率/线性/带宽权衡的管理中找到应用。在本文中,已经考虑了两种匹配的网络架构。一个多根网络和一个步进阻抗微带线网络。通过使用上述过程实现的两个功率放大器的设计,仿真和测量,该方法已得到验证。第一个放大器覆盖1.6–2.2 GHz(分数带宽的31.6%),在2 dB压缩点具有55%–68%的漏极效率,最坏情况下的相邻信道功率比(ACRP)和误差矢量幅度(EVM)为$ {- } hbox {21.8 dBc} $和8.35%。第二个覆盖范围为0.5–1.8 GHz(分数带宽的113%),在2 dB压缩点具有50%–69%的漏极效率,最坏情况下的ACRP为$ {-} hbox {27.5 dBc} $,EVM为4.22%。两种放大器均基于商业封装的10W GaN HEMT晶体管。

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