Comparison Between Pseudospectral and Discrete Geometric Methods for Modeling Quantization Effects in Nanoscale Electron Devices

摘要

This paper aims at comparing the pseudospectral method and discrete geometric approach for modeling quantization effects in nanoscale devices. To this purpose, we implemented a simulation tool, based on both methods, to solve a self-consistent Schrödinger–Poisson coupled problem for a 2-D electron carrier confinement according to the effective mass approximation model (suitable for FinFETs and nanowire FETs).