首页> 外文期刊>IEEE Transactions on Magnetics >Ru Underlayer Elimination for CoPt-Based Sputtered Tape With Perpendicular Recording Toward 330 TB per Cartridge Product
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Ru Underlayer Elimination for CoPt-Based Sputtered Tape With Perpendicular Recording Toward 330 TB per Cartridge Product

机译:Ru底层消除Copt的溅射胶带,垂直记录为每盒产品330 TB

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摘要

A sputtered tape that uses a CoPt-based granular recording layer was developed for practical application in the next generation of large-capacity magnetic tapes. 1) First, disk media were prepared by depositing films onto glass substrates using an inline disk sputter machine in which the substrates were stationary facing the target, and the ability to control the crystalline orientation, the magnetic isolation, and the magnetic anisotropy of the recording layer, which are the important functions of the underlayer, was investigated. As a result, it was found that the medium with Co 60 Cr 40 (45 nm)/Co 60 Cr 40 -15 vol.% TiO 2 (5 nm) as the underlayer has the same properties as the medium with the Ru underlayer. 2) Next, a sputtered magnetic tape with Co 60 Cr 40 (25 nm)/Co 60 Cr 40 -SiO 2 (25 nm) as the underlayer deposited on a polymer film was prepared using a roll-to-roll sputtering machine. The ability to control the crystalline orientation and magnetic isolation of the magnetic recording layer was evaluated, and from the results it was found that a magnetic film with a granular structure was formed on the sputtered magnetic tape in which the $c$ -axis of the magnetic crystal grains is oriented in the direction perpendicular to the film and the magnetic crystal grains are separated by the SiO 2 amorphous phase. 3) Furthermore, when the recording properties of the sputtered magnetic tape with a Co 60 Cr 40 (25 nm)/Co 60 Cr 40 -SiO 2 (25 nm) underlayer were compared with those of a magnetic tape for a linear tape-open (LTO) format eighth-generation tape cartridge (LTO 8), it was confirmed that the broadband signal-to-noise ratio of the sputtered tape with a Co 60 Cr 40 /Co 60 Cr 40 -SiO 2 underlayer is 4.2 dB higher than that of the LTO 8 tape at a linear density of 300 kfci.
机译:在下一代大容量磁带中开发了一种使用基于Copt的颗粒记录层的溅射带。 1)首先,使用内联盘溅射机将薄膜沉积到玻璃基板上,其中基板静静地面向目标,以及控制晶体取向,磁隔离和磁性各向异性的能力,制备磁盘介质。研究了层层,这是底层的重要功能。结果,发现具有CO 60 cr 40 (45 nm)/ co <​​sub xmlns:mml =”http://www.w3.org/1998/math/mathml“xmlns:xlink =”http://www.w3 .org / 1999 / xlink“> 60 cr 40 -15 vol.%tio 2 (5 nm),因为底层具有与Ru底层的媒体相同的属性。 2)接下来,具有CO 60 cr 40 (25 nm)/ co <​​sub xmlns:mml =”http://www.w3.org/1998/math/mathml“xmlns:xlink =”http://www.w3.org / 1999 / xlink“> 60 cr 40 -sio 2 (25nm)作为沉积在聚合物薄膜上的底层。评价控制磁性记录层的晶体取向和磁隔离的能力,结果发现,在溅射的磁带上形成具有颗粒结构的磁性膜,其中<内联公式XMLNS:MML =“http://www.w3.org/1998/math/mathml”xmlns:xlink =“http://www.w3.org/1999/xlink”> $ c $ 磁性晶粒的轴在垂直于薄膜的方向上定向,磁性晶粒通过SiO 2 非晶相。 3)此外,当用CO 60 cr 40 (25 nm)/ co <​​sub xmlns:mml =”http://www.w3.org/1998/math/mathml“xmlns:xlink =”http:/ / www.w3.org/1999/xlink“> 60 cr 40 -sio 2 (25 nm)底层与线性磁带开放(lto)格式第八发电磁带盒(lto 8),它被证实是溅射带的宽带信噪比与CO 60 cr 40 / co <​​sub xmlns:mml =”http://www.w3。 ORG / 1998 / MATH / MATHML“XMLNS:XLink =”http://www.w3.org/1999/xlink“> 60 cr 40 -sio 2 底层比LTO 8磁带高出300的4.2 dB kfci。

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