Prospects of Using In-Containing Semiconductor Materials in Magnetic Field Sensors for Thermonuclear Reactor Magnetic Diagnostics

摘要

The work presents the results of experimental investigation into the effect of neutron irradiation on thin-film magnetic field Hall sensors. It is shown that sensors based on InSb/i-GaAs heterostructures are promising for application under radiation conditions in thermonuclear reactor magnetic diagnostics systems. At the same time, the presence of buffer layers in InAs/i-GaAs heterostructures makes this material unfit for application under neutron flux conditions.