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Theoretical and Experimental Investigation of Microwave Absorbing X-Type Hexaferrites Nanomaterial Synthesized by Cotton Soaked Method

机译:微波吸收X型六足纳米材料合成的理论与实验研究棉浸渍法合成

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摘要

In this article, Pr-Mn substituted X-type hexagonal ferrite Sr1-xPrxCu2MnyFe28-yO46 with concentrations of x = 0, 0.02, 0.06, 0.1 and y = 0, 0.1, 0.3, 0.5 were prepared by using cotton soaked method. The main intention of this article was to explain the microwave absorption phenomenon theoretically and to perceive the effect of Pr-Mn substitution on structural, magnetic, thermal, and microwave absorption properties of X-type hexagonal ferrites. Moreover, the fabrication of material suitable for microwave absorption devices, permanent magnets, and for recording media applications was also aimed in present investigation. The XRD patterns reveal that all the prepared samples possess X-type hexagonal structure. A gradual and slight increase in both lattice parameters "a" and "c" values was observed with Pr-Mn substitution. The metal-oxygen stretching (M-O) vibrations in the FTIR spectrum at a low frequency indicates the presence of single phase in synthesized material. The enhancement in magnetic properties (saturation magnetization, retentivity, and coercivity) has been observed with the substitution of Pr-Mn contents in pure ferrites. A maximum reflection loss (RL) of -27.21 dB at 11.891 GHz was attained by Pr-Mn-substituted ferrites and reflectivity results agree well with RL results. Microwave absorption property of this substituted material made it a potential candidate to be used in super high frequency (SHF) devices.
机译:在本文中,通过使用棉浸渍法制制备浓度X = 0,0.02,0.06,0.1和Y = 0,0.1,0.3,0.5的PR-Mn取代X型六方铁素体SR1-XprxCu2mnyFEFE28-YO46。本文的主要目的是理论上解释微波吸收现象,并在X型六方铁氧体的结构,磁,热和微波吸收性上感知PR-Mn取代对结构,磁,热和微波吸收性能的影响。此外,本发明的研究还针对适用于微波吸收装置,永磁体和用于记录介质应用的材料的制造。 XRD图案揭示了所有制备的样品具有X型六边形结构。用PR-Mn替代观察到晶格参数“A”和“C”值的逐渐和轻微的增加。在低频下FTIR光谱中的金属 - 氧施拉(M-O)振动表明了合成材料中单相的存在。通过在纯铁氧体中取代Pr-Mn含量,观察到磁性(饱和磁化,保持性和矫顽力)的增强。通过Pr-Mn取代的铁氧体获得11.891GHz的最大反射损失(RL)为-27.21dB,反射率结果与RL结果一致。该取代材料的微波吸收性能使其成为超高频(SHF)器件中使用的潜在候选者。

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