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Nanostructured Iron-Doped Indium Tin Oxide Films: Synthesis and Characterization

机译:纳米结构的铁掺杂铟锡氧化物薄膜的合成与表征

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摘要

Multifunctional, Fe-doped indium tin oxide (ITO) nanostructured films were grown by pulsed laser deposition on sapphire substrates. The films showed low resistivity and n-type conductivity with a carrier density as high as $3times 10^{21}~{rm cm}^{-3}$ . A magnetic moment at room temperature larger than those of any iron oxides was measured in films with Fe doping as low as 2%. We ascribe it to the formation of bound polarons. A strong green photoemission at room temperature was observed, which we ascribe to quantum confinement effect. The coexistence of ferromagnetism and luminescence in the visible range makes our films of potential for magneto-optoelectronic applications.
机译:通过在蓝宝石衬底上脉冲激光沉积来生长多功能,掺铁的氧化铟锡(ITO)纳米结构薄膜。薄膜显示出低电阻率和n型电导率,载流子密度高达3乘以10 ^ {21}〜{rm cm} ^ {-3} $。在掺铁量低至2%的薄膜中测得的室温磁矩大于任何铁氧化物。我们将其归因于束缚极化子的形成。在室温下观察到强烈的绿色光发射,这归因于量子限制效应。铁磁和发光在可见光范围内的共存使我们的薄膜具有磁光电子应用的潜力。

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