Spin Valve Devices With Synthetic-Ferrimagnet Free-Layer Displaying Enhanced Sensitivity for Nanometric Sensors

摘要

Spin valves (SVs) with synthetic-antiferromagnet (SAF) pinned layers and synthetic-ferrimagnet (SF) free-layers deposited by ion beam deposition are optimized for incorporation in nanometric sensors. The results on combined SAF-SF structures indicate a reduced saturation and offset fields when compared with the simple top-pinned or SAF structure. Therefore, SAF-SF SV display sensitivities of ~0.025%/Oe (200 nm sensor), ~0.1%/Oe (500 nm sensor), and ~0.2%/Oe (1 μm sensor), which correspond to an improvement of 2x, 4.5x, and 7x, respectively, when compared with all other SV stacks tested. The results are relevant for geometries where nanometric SVs are incorporated within very narrow gaps of magnetic flux concentrators leading to superior and competitive gains in sensitivity. These geometries have the unique feature of submicrometric spatial resolution, and have high impact on surface scanning applications.