Capacitive Effects of Gate on Spin-Dependent AC Transport

摘要

From the spin–spin interaction, spin-capacitive term is defined in a similar way to the usual charge capacitive term that is due to the charge–charge interaction. The charge and spin capacitive effects between the gate and central channel region are found to play an important role in gate-controlled spin-dependent transport systems. Both the capacitive terms affect system’s charge and spin ac transport properties. The behaviors of conductance, density of states, and internal potentials demonstrate the strong involvement of charge and spin in electrons in spin-dependent transport. The purpose of this paper is to draw attention to the Coulomb and exchange interactions in spintronics devices.