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首页> 外文期刊>IEEE transactions on dependable and secure computing >Design, Analysis and Application of Embedded Resistive RAM Based Strong Arbiter PUF
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Design, Analysis and Application of Embedded Resistive RAM Based Strong Arbiter PUF

机译:基于嵌入式电阻RAM的强大仲裁器PUF的设计,分析与应用

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Resistive Random Access Memory (RRAM) based Physical Unclonable Function (PUF) designs exploit either the probabilistic switching or the resistance variability during forming, SET and RESET processes of RRAM. Memory PUFs using RRAM are typically weak PUFs due to fewer number of challenge response pairs. We propose a strong arbiter PUF based on 1T-1R bit cell which is designed from conventional RRAM memory array with minimally invasive changes. Conventional voltage sense amplifier is repurposed to act like an arbiter and generate the response. Similarly, address and data lines are repurposed to act as challenge and response bits respectively. The PUF is simulated using 65 nm predictive technology models for CMOS and Verilog-A model for a hafnium oxide based RRAM. The proposed PUF architecture is evaluated for uniqueness, uniformity and reliability for various number of stages. It demonstrates mean intra-die Hamming Distance (HD) of 0.135 percent and inter-die HD of 51.4 percent, and passes the NIST tests. We study the vulnerability of proposed PUF to machine learning attacks. We also present an application of proposed PUF for data attestation in the internet of things. Proposed PUF-based data attestation consumes 9.88pJ of total energy per data block of 64-bits and offers a speed of 120.7 kbps.
机译:基于电阻的随机存取存储器(RRAM)的物理不可渗透功能(PUF)设计利用概率切换或RRAM的成形过程中的概率切换或电阻可变性。由于较少数量的挑战响应对,Memory Pufs通常是弱PUFS。我们提出了一种基于1T-1R位单元的强仲裁器PUF,其由传统的RRAM存储器阵列设计,具有微创变化。传统的电压读出放大器是重新批准的,以类似于仲裁器并产生响应。类似地,地址和数据线被重新批准以分别作为挑战和响应比特。 PUF使用65 NM预测技术模型来模拟CMOS和Verilog-A模型,用于氧化铪的RRAM。为各个阶段的唯一性,均匀性和可靠性评估所提出的PUF架构。它证明了模具中的平均脊柱距离(HD)为0.135%,模态HD为51.4%,并通过NIST测试。我们研究提议的PUF到机器学习攻击的脆弱性。我们还提出了拟议的PUF在互联网上的数据证明的应用。基于PUF的数据证明每次数据块的总能量为64位,提供120.7 kbps的速度。

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