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An 11b 70-MHz 1.2-mm{sup}2 49-mW 0.18-μm CMOS ADC With On-Chip Current/Voltage References

机译:具有片内电流/电压基准的11b 70MHz 1.2mm {sup} 2 49mW0.18μmCMOS ADC

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This work proposes an 11b 70-MHz CMOS pipelined analog-digital converter (ADC) as one of core circuit blocks for very high speed digital subscriber line system applications. The proposed ADC for the internal use has the strictly limited number of externally connected I/O pins while the ADC employs on-chip CMOS current/voltage references and a merged-capacitor switching technique to improve ADC performances. The ADC implemented in a 0.18-μm 1P4M CMOS technology shows the maximum signal-to-noise distortion ratio (SNDR) of 60 dB at 70 MSample/s. The ADC maintains the SNDR of 58 dB and the spurious-free dynamic resistance of 68 dB for input frequencies up to the Nyquist rate at 60 MSample/s. The measured differential and integral nonlinearities of the ADC are within ±0.63 and ±1.21 LSB, respectively. The active chip area is 1.2 mm{sup}2 and the ADC consumes 49 mW at 70 MSample/s at 1.8 V.
机译:这项工作提出了一种11b 70 MHz CMOS流水线模数转换器(ADC),作为超高速数字用户线系统应用的核心电路模块之一。内部使用的拟议ADC具有严格限制的外部连接I / O引脚数量,而ADC采用片上CMOS电流/电压基准和合并电容器开关技术来改善ADC性能。采用0.18μm1P4M CMOS技术实现的ADC在70 MSample / s时显示出60 dB的最大信噪失真比(SNDR)。对于高达60 MSample / s的奈奎斯特速率的输入频率,ADC的SNDR为58 dB,无杂散动态电阻为68 dB。 ADC的测量差分和积分非线性分别在±0.63和±1.21 LSB之内。有源芯片面积为1.2 mm {sup} 2,ADC在1.8 V电压下以70 MSamp / s的速度消耗49 mW。

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