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Singularity-Induced Bifurcations in Lumped Circuits

机译:集总电路中的奇异性引起的分叉

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A systematic analysis of singular bifurcations in semistate or differential-algebraic models of electrical circuits is presented in this paper. The singularity-induced bifurcation (SIB) theorem describes the divergence of one eigenvalue through infinity when an operating point or equilibrium locus of a parameterized differential-algebraic model crosses a singular manifold. The present paper extends this result to cover situations in which several eigenvalues diverge; we prove a multiple SIB theorem which states that a minimal rank (resp. index) change makes it possible to compute the number of diverging eigenvalues in terms of an index (resp. rank) change in the matrix pencil characterizing the linearized problem. The scope of the work comprises quasi-linear ordinary differential equations, semiexplicit index-1 differential-algebraic equation (DAEs), and Hessenberg index-2 DAEs, describing different electrical configurations. The electrical features from which singularities and, specifically, singular bifurcations stem are extensively discussed. Examples displaying simple, double, and triple SIB points illustrate different ways in which the spectrum may diverge.
机译:本文对电路的半状态或微分代数模型中的奇异分支进行了系统分析。奇异诱导分叉(SIB)定理描述了当参数化微分代数模型的工作点或平衡轨迹穿过奇异流形时,一个特征值通过无穷大的发散。本文将这个结果扩展到涵盖多个特征值发散的情况。我们证明了一个多重SIB定理,该定理指出最小的秩(resp。index)变化使得可以在表征线性化问题的矩阵铅笔中根据指数(resp。rank)变化来计算发散特征值的数量。工作范围包括拟线性常微分方程,半显式指数1微分代数方程(DAE)和Hessenberg指数2 DAE,描述了不同的电气结构。广泛讨论了奇异性(特别是奇异分叉)所基于的电气特征。显示简单,两倍和三次SIB点的示例说明了频谱发散的不同方式。

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