首页> 外文期刊>IEEE transactions on circuits and systems . I , Regular papers >Optimum masking levels and coefficient sparseness for Hilbert transformers and half-band filters designed using the frequency-response masking technique
【24h】

Optimum masking levels and coefficient sparseness for Hilbert transformers and half-band filters designed using the frequency-response masking technique

机译:使用频率响应屏蔽技术设计的希尔伯特变压器和半带滤波器的最佳屏蔽等级和系数稀疏性

获取原文
获取原文并翻译 | 示例
           

摘要

Hilbert transformers and half-band filters are two very important special classes of finite-impulse response filters often used in signal processing applications. Furthermore, there exists a very close relationship between these two special classes of filters in such a way that a half-band filter can be derived from a Hilbert transformer in a straightforward manner and vice versa. It has been shown that these two classes of filters may be synthesized using the frequency-response masking (FRM) technique resulting in very efficient implementation when the filters are very sharp. While filters synthesized using the FRM technique has been characterized for the general low-pass case, Hilbert transformers and half-band filters synthesized using the FRM technique have not been characterized. The characterization of the two classes of filter is a focus of this paper. In this paper, we re-develop the FRM structure for the synthesis of Hilbert transformer from a new perspective. This new approach uses a frequency response correction term produced by masking the frequency response of a sparse coefficient filter, whose frequency response is periodic, to sharpen the bandedge of a low-order Hilbert transformer. Optimum masking levels and coefficient sparseness for the Hilbert transformers are derived; corresponding quantities for the half-band filters are obtained via the close relationship between these two classes of filters.
机译:希尔伯特变压器和半带滤波器是经常在信号处理应用中使用的两个非常重要的特殊类别的有限脉冲响应滤波器。此外,在这两个特殊类别的滤波器之间存在着非常紧密的关系,使得半带滤波器可以直接方式从希尔伯特变换器中导出,反之亦然。已经表明,可以使用频率响应屏蔽(FRM)技术来合成这两类滤波器,从而在滤波器非常尖锐时实现非常有效的实现。虽然已针对一般的低通情况对使用FRM技术合成的滤波器进行了表征,但尚未对使用FRM技术合成的希尔伯特变压器和半带滤波器进行表征。这两类滤波器的特性是本文的重点。在本文中,我们从新的角度重新开发了用于合成希尔伯特变压器的FRM结构。这种新方法使用了通过屏蔽频率响应为周期性的稀疏系数滤波器的频率响应而产生的频率响应校正项,以增强低阶希尔伯特变压器的带宽。推导了希尔伯特变压器的最佳屏蔽水平和系数稀疏度。通过这两类滤波器之间的紧密关系,可以获得半带滤波器的相应数量。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号