Type-I Diode Lasers for Spectral Region Above 3 μm

摘要

In this paper, we consider the role of carrier confinement in achieving high-power continuous wave (CW) room temperature operation of GaSb-based type-I quantum-well (QW) diode lasers at wavelengths above 3 μm. The use of compressive strain and quinternary barrier materials to confine holes in the active QWs allows the fabrication of 3-μm GaSb-based type-I QW diode lasers operating at 17 °C in the CW mode with output power of 360 mW. We will present the results of characterization of 2.2-μm diode lasers grown on metamorphic virtual substrates. The use of InGaSb virtual substrate makes it possible to fabricate devices with As free QWs. The prospects of using virtual substrates for development of GaSb-based type-I lasers will be discussed.