Increasing the Speed of an InP-Based Integration Platform by Introducing High Speed Electroabsorption Modulators

摘要

We report high speed electroabsorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low dc bias voltage below 1 V at an increased temperature, as well as operation in a semicooled environment, tested in the range of 20 degrees C -60 degrees C. Furthermore, we improve the intrinsic S-parameter response with a codesign circuit. The intrinsic 3-dB bandwidth of a 100-mu m-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three-time speed increase of the existing platform, from previously offered 9 GHz (using an EAM) to 24 GHz shown in this paper.