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Exploring Parity Anomaly for Dual Peak Infrared Photodetection

机译:探索奇偶异常的双峰红外光电检测

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In this paper, we show a superlattice quantum well infrared photodetector (S-QWIP) grown by metal-organic vapor phase epitaxy with two narrow photocurrent peaks in the mid infrared range due to transitions between the ground state from a quantum well and two excited states localized in the continuum. The structure composed of InGaAs/InAlAs quantum-well lattice matched to InP with a central quantum well acting as an artificial defect. The potential profile is carefully chosen to explore the parity anomaly of the continuum localized states and also to reduce the thermoexcited electrons decreasing the dark current. The photocurrent spectrum shows two peaks with transition energies of 300 and 460 meV ( Δλ/λ of 0.13 and 0.12) at 12 K. The peak detectivity is 1.23×1010 Jones at 30 K and +5 V. When compared with a regular multiquantum well sample designed to generate photocurrent at the same wavelength, the S-QWIP shows an increase of 15 K on its background-limited performance temperature and a lower dark current for temperatures above 200 K.
机译:在本文中,我们显示了由金属有机气相外延生长的超晶格量子阱红外光电探测器(S-QWIP),由于在量子阱的基态和两个激发态之间的跃迁,在中红外范围内有两个窄的光电流峰局部化。由InGaAs / InAlAs量子阱晶格组成的结构与InP匹配,中心量子阱充当人工缺陷。仔细选择电势分布图,以探索连续局部化状态的奇偶异常,并减少热激发电子,从而降低暗电流。该光电流谱在12 K处显示两个跃迁能量分别为300和460 meV(Δλ/λ为0.13和0.12)的峰。在30 K和+5 V处,峰检测率为1.23×1010 Jones。与常规多量子阱比较在设计为在相同波长下产生光电流的样品中,S-QWIP在其背景限制的工作温度下显示增加了15 K,而在200 K以上的温度下显示了更低的暗电流。

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