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Partly gain-coupled 1.55 mu m strained-layer multiquantum-well DFB lasers

机译:部分增益耦合的1.55μm应变层多量子阱DFB激光器

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摘要

1.55- mu m gain-coupled InGaAsP-InP distributed feedback (DFB) lasers which use a strained-layer multi-quantum-well (MQW) active grating for a mixed index and gain coupling have been fabricated and studied. The lasers exhibit distinct longitudinal-mode behaviour due to gain-coupling effects, including a high single-mode yield. Cavity length dependence of the mode behavior has been experimentally studied and simulated using a transfer-matrix method. Both experimental and theoretical results indicate that the shorter cavity lasers with the present structure have higher kappa /sub gain/L/ kappa /sub inde/ ratios and wider Fabry-Perot mode spacing than the longer cavity ones; these features enable the shorter cavity lasers to have a high single-mode yield (90%) and a high side-mode-suppression ratio (55 dB).
机译:制作并研究了使用应变层多量子阱(MQW)有源光栅混合折射率和增益耦合的1.55μm增益耦合InGaAsP-InP分布式反馈(DFB)激光器。由于增益耦合效应,包括高单模产量,激光器表现出独特的纵向模式行为。使用传输矩阵方法对模态行为的腔长依赖性进行了实验研究和模拟。实验和理论结果均表明,与较长腔腔激光器相比,具有本结构的较短腔腔激光器具有更高的κ/子增益/ L / kappa / subinde /比和更宽的法布里-珀罗模式间距。这些特性使短腔激光器具有较高的单模产率(90%)和较高的旁模抑制比(55 dB)。

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