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首页> 外文期刊>IEEE Journal of Quantum Electronics >GaAs MSM photodetectors with recessed anode and/or cathode
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GaAs MSM photodetectors with recessed anode and/or cathode

机译:具有凹入阳极和/或阴极的GaAs MSM光电探测器

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The GaAs metal-semiconductor-metal photodetectors (MSM-PDs) withnrecessed electrodes have been systematically characterized. The recessedncathode results in effective collection of the speed-limiting holes duento both a strengthened electric field and a shortened transit pathnaround the absorption region while the recessed anode gives nonsignificant change on the electric field distribution, as evidenced bynthe two dimensional simulation. The experimental results show that thenMSM-PDs having the recessed-cathode structure, compared with thenconventional one, exhibit a substantial improvement on the speed, peaknamplitude, and capacitance, especially at low-bias operation. The fallntime of the temporal response approaches its saturation value of aboutn10 ps at a bias voltage as low as 3 V on the 50 Μm×50 Μmndetector with a finger width and spacing of 2 Μm
机译:带有凹入电极的GaAs金属-半导体-金属光电探测器(MSM-PDs)已得到系统地表征。凹进的阴极由于加强的电场和缩短的吸收区域周围的传输路径而有效地收集了限速孔,而凹进的阳极在电场分布上没有显着变化,这由二维模拟证明。实验结果表明,具有凹入阴极结构的MSM-PD与传统的相比,在速度,峰值幅度和电容方面表现出了显着的提高,尤其是在低偏置操作下。在50 Mm×50 Mmn检测器上,手指宽度和间距为2μm,时间响应的下降时间在低至3 V的偏置电压下接近其饱和值n10 ps。

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