Technology of InP-based 1.55-Μm ultrafast OEMMICs: 40-Gbit/sbroad-band and 38/60-GHz narrow-band photoreceivers

摘要

For future long-haul communication systems operating at bitratesnof 40 Gbit/s and for broad-band mobile access systems using 38- orn60-GHz carrier frequencies, ultrafast photoreceivers have to benprovided. Therefore, an integration concept for InP-based optoelectronicnmicrowave monolithic integrated circuits for the 1.55-Μm wavelengthnregime is demonstrated, which allows independent optimization of thenconstituting devices. Two different types of photodetectors (PDs), anwaveguide-integrated PIN photodiode (PD) and a top-illuminatednmetal-semiconductor-metal PD, both having bandwidths of up to 70 GHz,nhave been developed. These are fabricated together with differentnamplifier designs employing high electron mobility transistors whichnexhibit transit frequencies of up to 90 GHz. The application to an40-Gbit/s broadband photoreceiver for high-bit-rate time-divisionnmultiplexing systems is reported, as well as the application to 38- andn60-GHz narrow-band photoreceivers for use as optic/millimeterwavenconverters in mobile communication systems