Ultrafast all-optical modulation of infrared radiation via metal-semiconductor waveguide structures

摘要

We present a novel optical-optical semiconductor switching technique for application to infrared laser beam modulation and ultrashort infrared laser pulse switching. This method relies on the ultrafast optical excitation, with femtosecond above-bandgap laser radiation, of an air-filled metal-clad semiconductor waveguide. Guided electromagnetic wave analysis combined with time-varying dielectric properties of the semiconductor layer are used to investigate the ultrafast switching speed of the structure. The device is capable of modulation at various infrared wavelengths. In particular, we investigate intensity modulation of the quasi-TE/sub 10/ mode for 10.6-/spl mu/m laser radiation. At an electron-hole photoinjection density of /spl sim/1.8/spl times/10/sup 18/ cm/sup -3/, an extinction ratio of 83 dB is demonstrated. This ratio is significantly higher than that exhibited by current optical-optical semiconductor switches. Potential applications to all-optical Mach-Zehnder metal-clad semiconductor modulators and self-limiting switches are also discussed.