Spectral properties of amplified spontaneous emission insemiconductor optical amplifiers

摘要

We present a theoretical investigation of the spectral propertiesnof spontaneous emission in semiconductor optical amplifiers. We use annextended (3×3) transfer matrix formalism to derive in the spectralndomain an expression for the total longitudinally averaged internalnfield, which is valid regardless of the levels of optical input and biasncurrent. The material parameters are saturated not only by thenmonochromatic signal, but also by the amplified spontaneous emission,nfiltered into the resonance modes of the structure, and integrated overnits whole spectral range